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GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-bandgap semiconductors, resulting in better radiation resistance. Theoretically, it supports higher speeds as the device dimensions could be reduced without suffering voltage breakdown. The simulation and experimental results illustrate the superior performance of the Gallium Nitride High-Electron-Mobility Transistors in an amplifying circuit. Using a spice model for commercially available Gallium Nitride High-Electron-Mobility Transistors, non-distorted output to an input signal of 200 ps was displayed. Real-world measurements underscore the fast response of the Gallium Nitride High-Electron-Mobility Transistors with its measured slew rate at approximately 3000 V/μs, a result only 17% lower than the result obtained from the simulation. This fast response, coupled with the amplifier radiation resistance, shows promise for designing improved detection and imaging circuits with long Mean Time Between Failure required, for example, by next-generation industrial-process gamma transmission-computed tomography. 

This themed collection published across the Journal of Materials Chemistry C and Materials Advances commemorates Richard T. Williams, Reynolds Professor of Physics at Wake Forest University (WFU), who passed away on July 5, 2021, at the age of 75. 

Abstract Single crystal scintillators have become one of the most common materials used in technologies that use radiation detectors. Unfortunately, as technology demands improved detectors, research into better single crystal scintillators has nearly reached its limit. Ceramics provide many benefits over single crystal scintillators and have emerged as a promising new production process. Recent research into ceramic scintillators has mostly dealt with oxides as they are relatively easy to handle and are typically non‐hygroscopic. Among single crystal scintillators, a trend has emerged indicating that the addition of halide ions into the crystal structure improves the light yield and energy resolution of the scintillation material but also tends to make the material hygroscopic and in some cases intrinsically radioactive. Little research is devoted to the investigation of undoped halide ceramic scintillators. Transparent halide Cs₂HfCl₆ceramics are developed by hot uniaxial pressing, and the scintillation properties are compared to that of its single crystal counterpart. The energy resolution of the ceramic is found to be 6.4% at 662 keV. The initial results indicate that ceramic scintillators are a viable alternative and a promising new direction in scintillator material technology.